Indium Phosphide single crystal

• III-V semiconductor
• Crystal Structure: cubic, zinc blend, a =5.869Å
• Bandgap width : 1.27eV (room), direct gap semiconductor
• Growth method : LEC
• Melting Point :. 1330°C
• B face epi polished, A face etched and lapped

InP(100)±0.5°, Undoped

• Size : 50.8mmØ X 0.4 - 0.5mm thick.
• Conductivity type : N
• Carrier concentration, /cm3 at 77K : < 2 x 1016
• Mobility, cm2/V.s : > 3900
• EPD, /cm2 : < 2 x 104
• Orientation flat : (110)
• Unit price : 25,000 yen

InP(100)±0.5°, S doped

• Size : 50.8mmØ X 0.4 - 0.5mm thick.
• Conductivity type : N
• Carrier concentration, /cm3 at 77K : (1 - 5) X 1018
• Mobility, cm2/V.s : 1500-2000
• EPD, /cm2 : < 2 X 104
• Orientation flat : (110)
• Unit price : 25,000 yen

InP(100)±0.5°, Zn doped

• Size : 50.8mmØ X 0.4 - 0.5mm thick.
• Conductivity type : P
• Carrier concentration, /cm3 at 77K : (1 - 3) X 1018
• Mobility, cm2/V.s : 40 - 60
• EPD, /cm2 : < 2 X 104
• Orientation flat : (110)
• Unit price : 25,000 yen

InP(111)±0.5°, Undoped

• Size : 50.8mmØ X 0.4 - 0.5mm thick.
• Conductivity type : N
• Carrier concentration, /cm3 at 77K : < 1 x 1016
• Mobility, cm2/V.s : 4000
• EPD, /cm2 : ≤ 5 x 104
• Orientation flat : (110)
• Unit price : 25,000 yen

InP(111)±0.5°, S doped

• Size : 50.8mmØ X 0.4 - 0.5mmT
• Conductivity type : N
• Carrier concentration, /cm3 at 77K : (4 - 6) X 1018
• Mobility, cm2/V.s : > 1200
• EPD, /cm2 : < 2 X 104
• Orientation flat : (110)
• Unit price : 25,000 yen

InAs(111)±0.5°, Zn doped

• Size : 50.8mmØ X 0.4 - 0.5mmT
• Conductivity type : P
• Carrier concentration, /cm3 at 77K : 3 X 1018
• Mobility, cm2/V.s : 63
• EPD, /cm2 : < 5 X 104
• Orientation flat : (110)
• Unit price : 25,000 yen