Indium arsenide single crystal wafer

InAs(100)±0.5°, Undoped

• Size : 50.8mmØ X 0.45mm thick.
• Conductivity type : N
• B face epi ready polished, A face etched and lapped
• Carrier concentration, /cm3 at 77K : < 3 X 1016
• Mobility, cm2/V.s : 22000
• EPD, /cm2 : < 5 X 104
• Growth method : LEC
• Orientation flat : (110)
• Unit price : 27,000 yen

InAs(100)±0.5°, S doped

• Size : 50.8mmØ X 0.45mm thick.
• Conductivity type : N
• B face epi ready polished, A face etched and lapped
• Carrier concentration, /cm3 at 77K : (2-7) X 1017
• Mobility, cm2/V.s : (1-2) X 104
• EPD, /cm2 : < 5 X 104
• Growth method : LEC
• Orientation flat : (110)
• Unit price : 27,000 yen

InAs(100)±0.5°, Zn doped

• Size : 50.8mmØ X 0.45mm thick.
• Conductivity type : P
• B face epi ready polished, A face etched and lapped
• Carrier concentration, /cm3 at 77K : < 2.7 X 1018
• Mobility, cm2/V.s : (1-2) X 102
• EPD, /cm2 : < 3 X 104
• Growth method : LEC
• Orientation flat : (110)
• Unit price : 27,000 yen

InAs(110)±0.5° Undoped

• Size : 50.8mmØ X 0.45mm thick.
• Conductivity type : N
• B face epi ready polished, A face etched and lapped
• Carrier concentration, /cm3 at 77K : < 3 X 1016
• Mobility, cm2/V.s : 20000
• EPD, /cm2 : < 5 X 104
• Growth method : LEC
• Orientation flat : (110)
• Unit price : 27,000 yen

InAs(111)±0.5°, Undoped

• Size : 50.8mmØ X 0.45mm thick
• Conductivity type : N
• B face epi ready polished, A face etched and lapped
• Carrier concentration, /cm3 at 77K : < 3 X 1016
• Mobility, cm2/V.s : 20000
• EPD, /cm2 : < 5 X 104
• Growth method : LEC
• Orientation flat : (110)
• Unit price : 27,000 yen

InAs(111)±0.5°, S doped

• Size : 50.8mmØ X 0.45mm thick.
• Conductivity type : N
• B face epi ready polished, A face etched and lapped
• Carrier concentration, /cm3 at 77K : (7-9) X 1017
• Mobility, cm2/V.s : > 13000
• EPD, /cm2 : < 5 X 104
• Growth method : LEC
• Orientation flat : (110)
• Unit price : 27,000 yen

InAs(111)±0.5°, Zn doped

• Size : 50.8mmØ X 0.45mm thick.
• Conductivity type : P
• B face epi ready polished, A face etched and lapped
• Carrier concentration, /cm3 at 77K : (2-4) X 1017
• Mobility, cm2/V.s : 190
• EPD, /cm2 : < 5 X 104
• Growth method : LEC
• Orientation flat : (110)
• Unit price : 27,000 yen