α-Al2O3 Sapphire square wafer
- Orientation : (1,1,2,0), (0,0,0,1), (1,1,0,2)
- Orientation accuracy : +/-0.5°
- Purity : 99.99%
- Crystal structure : trigonal system, corundum structure
- Lattice constant : a = 4.758 Å c = 12.991 Å
- Color : colorless
- Hardness : 9 Mohs
- Density : 3.98 grams / cm3
- Melting Point : 2030 °C
- Growth method : CZ
- Thermal expansion coefficent : 7 X 10-6 / °C
- Thermal conductivity ( W/(m.K) ) : 46.06 at 0°C, 25.12 at 100°C, 12.56 at 400°C,
- Dielectric constant : ~ 9.4 at 300K at A axis, ~ 11.58 at 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis , < 5 x10-5 at C axis
| Orientation | Size | 1 side polished | 2 sides polished |
|---|---|---|---|
| C (0,0,0,1) | 10 X 10 X 0.5mm3 | quote | quote |
| A (1,1,2,0) | 10 X 10 X 0.5mm3 | quote | quote |
| R (1,1,0,2) | 10 X 10 X 0.5mm3 | quote | quote |
Supplier : Dalian Keri Optoelectronic Technology Co., Ltd. (China)
50.8mmØ Sapphire wafer
- α-Al2O3 Sapphire
- Orientation : C-plane (0001)+/-0.2°
- Diameter : 50.8+/-0.1 mmØ
- Thickness : 430+/-10 μm
- Front face : Epi-ready Polished, Ra < 0.5nm
- Back face : fine ground
- Orientation flat : A-plane (1,1,2,0)
- TTV ≤15µm, BOW ≤15µm, WARP ≤15µm
- Quote in request
- In stock
